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OBJECT PROCESSING APPARATUS AND PLASMA FACILITY COMPRISING THE SAME 发明授权

2023-07-06 4100 693K 0

专利信息

申请日期 2026-04-20 申请号 KR1020027016193
公开(公告)号 KR100755241B1 公开(公告)日 2007-08-29
公开国别 KR 申请人省市代码 全国
申请人 Kabushiki Kaisha teku plasma Te Kuno Lodge Addo
简介 A processing apparatus for subject of the present invention uses a high voltage electrode and a ground electrode, and generates plasma under atmospheric pressure in a reaction passage through which a to-be-processed subject passes. For example, even fluorocompound such as PFC including CF4 can effectively be decomposed because the fluorocompound is brought into contact with plasma in a small space for sufficient time, and the apparatus has a small and simple structure. Therefore, the apparatus can be added to each process chamber.


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