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RARE EARTH VANADIUM OXIDE SINGLE CRYSTAL AND METHOD FOR MANUFACTURING THE SAME 发明申请

2023-06-02 3330 102K 0

专利信息

申请日期 2025-06-26 申请号 JP2006022462
公开(公告)号 JP2007204292A 公开(公告)日 2007-08-16
公开国别 JP 申请人省市代码 全国
申请人 SONY CORP
简介 PROBLEM TO BE SOLVED : To provide a high-quality rare earth vanadium oxide single crystal showing little decrease in the transmissivity due to generation of a low valence vanadium ion and to provide a method for manufacturing the crystal. SOLUTION : The method for manufacturing a rare earth vanadium oxide single crystal aims to obtain a single crystal to be used as a medium material for laser generation by growing a crystal by a pulling method from a heated source melt of a rare earth vanadium oxide, wherein the power supplied to contribute to heating the source melt is temporarily increased when precipitation of the crystal from the source melt starts so as to suppress the maximum precipitation rate per unit growth area of the crystal. COPYRIGHT : (C)2007, JPO&INPIT


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