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SILICON OXIDE FILM DOPED WITH RARE EARTH (RE) INCLUDING NANO CRYSTALLINITY SILICON DEPOSITED BY SPUT 发明申请

2023-01-20 2240 86K 0

专利信息

申请日期 2025-07-17 申请号 JP2006350640
公开(公告)号 JP2007201451A 公开(公告)日 2007-08-09
公开国别 JP 申请人省市代码 全国
申请人 SHARP KK
简介 PROBLEM TO BE SOLVED : To provide a method of manufacturing an SRSO film doped with rare earth (RE) elements which uses nano crystallinity (nc) silicon particles. SOLUTION : There are provided a supply process 702 of Si which is a first target and is embedded with a first RE element such as erbium (Er), ytterbium (Yb), cerium (Ce), praseodymiun (Pr), or terbium (Tr), a supply process 704 of Si which is a second target, a simultaneous sputtering process 708 for first and second targets, a formation process 710 of an Si oxide (SRSO) film which contains much Si for a substrate and is doped with first RE element, and an annealing process 712 of an SRSO film which is doped with first RE element. COPYRIGHT : (C)2007, JPO&INPIT


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