| 简介 |
PROBLEM TO BE SOLVED : To provide a storage element capable of suppressing variations in the characteristics, such as threshold voltages in recording, reading and writing of information, and having appropriate characteristics.
SOLUTION : The storage element 10 is configured, such that a storage layer 5 is sandwiched between a first electrode 1 and a second electrode 4, the storage layer 5 is composed of an ionized layer 3 containing Cu which is laminated on an oxidized layer 2, the oxide layer 2 consists of a rare earth element oxide, the oxidized layer 3 contains one or more kinds of element selected from among S, Se and Te, and the oxide layer 2 is formed into a substantially identical planar pattern as that of the electrode 1 of the oxide layer 2.
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