| 简介 |
PROBLEM TO BE SOLVED : To chemically join a joint surface between a semiconductor device or a heat conductor and a diamond heat spreader at normal temperature not by using an adhesive agent but by activation.
SOLUTION : The present normal temperature joint method bonds a copper or aluminum heat sink and heat spreader (metallic heat conductor) to a semiconductor device through a diamond heat spreader. A diamond heat spreader obtained as a diamond film cut out of natural diamond and the like or film-formed by a vapor-phase synthetic method planarizes a surface joined to the semiconductor device and to the metallic heat conductor to an average asperity (Ra) of 30 nm or less by using direct polishing or polishing a metal film formed on the surface, and a rare beam of argon (Ar) and the like are irradiated to a joint surface between the normal temperature diamond heat spreader and the semiconductor device, and between the diamond heat spreader and the metallic heat conductor located under a vacuum or inactive gas atmosphere, thereby activating and bonding them.
COPYRIGHT : (C)2007, JPO&INPIT |
客服热线：
手机版
二维码
