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Energy conversion and storage films and devices by physical vapor deposition of titanium and titaniu 发明申请

2023-04-03 3080 1303K 0

专利信息

申请日期 2025-07-10 申请号 US11726972
公开(公告)号 US20070172681A1 公开(公告)日 2007-07-26
公开国别 US 申请人省市代码 全国
申请人 Richard E Demaray; Hong Mei Zhang; Mukundan Narasimhan; Vassiliki Milonopoulou
简介 High density oxide films are deposited by a pulsed-DC, biased, reactive sputtering process from a titanium containing target to form high quality titanium containing oxide films. A method of forming a titanium based layer or film according to the present invention includes depositing a layer of titanium containing oxide by pulsed-DC, biased reactive sputtering process on a substrate. In some embodiments, the layer is TiO2. In some embodiments, the layer is a sub-oxide of Titanium. In some embodiments, the layer is TixOy wherein x is between about 1 and about 4 and y is between about 1 and about 7. In some embodiments, the layer can be doped with one or more rare-earth ions. Such layers are useful in energy and charge storage, and energy conversion technologies.


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