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Low-temperature sintered barium titanate microwave dielectric ceramic material 发明授权

2023-08-31 1060 840K 0

专利信息

申请日期 2025-06-25 申请号 US11066303
公开(公告)号 US7241712B2 公开(公告)日 2007-07-10
公开国别 US 申请人省市代码 全国
申请人 Sea Fue Wang; Yuh Ruey Wang; Mei Hui Hsiao
简介 The present invention relates to a low-temperature sintered barium titanate microwave dielectric ceramic material. The host matrix thereof can be represented by BaxTiyMzOx+2y+k, where x is 1˜6, y is 1˜17, z is 0˜1, k is 0˜3, M is an element substituting the Ba or Ti ion, for example selected from an alkali metal, an alkaline-earth metal, a transition group or a rare earth group, and preferably Ba2Ti9O20 or the host matrix containing Zr, Sn, Zn, etc. According to the present invention, a low melting glass is added and a subsequent milling operation is performed to reduce the sintering temperature of the microwave dielectric ceramic material to less than 1, 000° C. The low melting glass can be for example the Ba—B—Si—Li glass, Ba—B—Zn—Si—Li glass, Ba—B—Si—Li—Cu glass or Cu—B—Zn—Si—Li glass.


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