| 简介 |
PURPOSE : An etch resistant wafer processing apparatus and a method for manufacturing the same are provided to improve etch resistant with respect to fluorine by using a laminated structure having at least one AlN film layer as an upper coating.
CONSTITUTION : A base substrate(8) includes one or more out of graphite, a fire-resistant metal, a transition metal, a rare earth metal, and alloy thereof. An electrical insulating layer is deposited on the base substrate. The electrical insulating layer includes one or more out of oxide, nitride, and oxide nitride selected from a group consisting of Al, B, Si, Ga, a fire resistant hard metal, a transition metal, and combination thereof. A film electrode(6) is arranged on the electrical insulating layer. One or more coating layers(5) are arranged on the film electrode. The coating layers include one or more out of nitride, carbide, carbon nitride, and oxynitride selected from a group consisting of B, Al, Si, Ga, a fire resistant hard metal, a transition metal, and combination thereof.
© KIPO 2007 |
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