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METHOD OF FORMING FLUORINATED CARBON FILM 发明授权

2023-09-29 3490 299K 0

专利信息

申请日期 2025-07-07 申请号 KR1020057022302
公开(公告)号 KR100733440B1 公开(公告)日 2007-06-22
公开国别 KR 申请人省市代码 全国
申请人 TOKYO ELECTRON LIMITED; OHMI TADAHIRO
简介 With a view toward enhancing the adhesion between a fluorinated carbon film and a substratum film, there is provided a method of forming a fluorinated carbon film on a substrate to be treated, characterized in that the method comprises the first step of, by means of a substrate treating unit, effecting plasma excitation of a rare gas and carrying out surface treatment of the substrate with the plasma-excited rare gas and the second step of forming a fluorinated carbon film on the resultant substrate, the substrate treating unit including a microwave antenna electrically connected to a microwave power source.


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