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PLASMA PROCESSING METHOD, AND PLASMA PROCESSING SYSTEM 发明申请

2023-05-25 4610 150K 0

专利信息

申请日期 2025-06-28 申请号 JP2005340866
公开(公告)号 JP2007146211A 公开(公告)日 2007-06-14
公开国别 JP 申请人省市代码 全国
申请人 PHYZCHEMIX CORP
简介 PROBLEM TO BE SOLVED : To provide a plasma processing method capable of excellently carrying a substrate in/out of a plasma processing chamber while maintaining plasma in the plasma processing chamber, and evacuating/re-carrying in an etched member in a cleaning mode. SOLUTION : When performing the predetermined plasma processing by using a plasma processing system comprising a plasma processing chamber A for performing the predetermined plasma processing to a substrate, a conveying chamber B for carrying the substrate in/out of the plasma processing chamber A, and a first gate valve G1 arranged between the plasma processing chamber A and the conveying chamber B to partition them, the plasma processing chamber A is set to be under the pressure atmosphere capable of generating plasma and plasma generated in the plasma processing chamber A is maintained. When the substrate is carried in from the conveying chamber B to the plasma processing chamber A, or the substrate is carried out from the plasma processing chamber A to the conveying chamber B, the pressure in the conveying chamber B is controlled to be equal to that in the plasma processing chamber A, and the first gate valve G1 is opened to carry in/out the substrate. COPYRIGHT : (C)2007, JPO&INPIT


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