| 简介 |
PROBLEM TO BE SOLVED : To provide a semiconductor device which has an MIS transistor with a metal gate, prevents additional man-hours as much as possible, and does not complicate the manufacturing conditions.
SOLUTION : This semiconductor device is equipped with an N-channel MIS transistor 15 comprising a substrate 1, a p-type semiconductor layer 3 created on the substrate, a first gate insulating film 9 created on the p-type semiconductor layer, a first gate electrode 11 having an alloy of a metal selected from a group composed of Ru, Pt and Rh provided on the first gate insulating film and a rare earth metal, and n-type impurity regions 7, 8 created on the p-type semiconductor layer at both sides of the first gate insulating electrode.
COPYRIGHT : (C)2007, JPO&INPIT |
客服热线：
手机版
二维码
