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Faraday rotator 发明授权

2023-11-21 3110 39K 0

专利信息

申请日期 2026-04-23 申请号 JP2001400165
公开(公告)号 JP3917859B2 公开(公告)日 2007-05-23
公开国别 JP 申请人省市代码 全国
申请人 Guranoputo Inc505418434
简介 PROBLEM TO BE SOLVED : To provide a bismuth-substituted rare earth iron garnet single crystal film in which the direction of magnetization is vertical to the film surface, a nucleation magnetic field is equal to or smaller than a saturation magnetic field and the value of the saturation magnetic field is small. SOLUTION : The bismuth-substituted rare earth iron garnet single crystal film grown by a liquid phase epitaxial method is heated for two hours or longer within a temperature range whose lower limit valve is higher than the growing temperature of the bismuth-substituted rate earth iron garnet single crystal film by 50°C and whose higher limit value is higher than the growing temperature of the garnet single crystal film by 120°C to obtain a Faraday rotator. COPYRIGHT : (C)2003, JPO


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