| 简介 |
A semiconductor device is provided that has MIS transistors with metal gates that can prevent an increase in the number of manufacturing steps as much as possible and also restrain difficulties in the manufacturing conditions. This semiconductor device has a substrate; and an n-channel MIS transistor including : a p-type semiconductor layer formed on the substrate; a pair of n-type source/drain regions formed in the p-type semiconductor layer and isolated each other; a first gate insulating film formed on the p-type semiconductor layer and located between the pair of n-type source/drain regions; and a first gate electrode formed on the first gate insulating film and containing an alloy of a rare-earth metal and a metal selected from the group consisting of Ru, Pt, and Rh. |
客服热线：
手机版
二维码
