客服热线:18202992950

Aluminumnitridsinterkörper, article with embedded metal, electronically functional material and el 译文

2023-10-27 3440 1108K 0

专利信息

申请日期 2025-06-27 申请号 DE69736205
公开(公告)号 DE69736205T2 公开(公告)日 2007-05-16
公开国别 DE 申请人省市代码 全国
申请人 NGK INSULATORS LTD
简介 In AlN crystal grains constituting a sintered body, is contained : 150 ppm - 0.5 wt.%, preferably at most 0.1 wt.%, of at least one rare earth element (as oxide thereof); at most 900 ppm, preferably at most 500 ppm of at least one metal impurity except rare earth elements; and preferably at least 0.5 wt.% of oxygen measured by an electron probe X-ray microanalyzer. The grains have an average grain diameter of preferably at least 3.0 mu m and show a main peak in the wavelength range of 350 - 370 nm of spectrum obtained by a cathode luminescence method. The sintered body composed of AlN crystal grains has a volume resistivity at room temperature of at most 1.0 x 10 OMEGA .cm.


您还没有登录,请登录后查看下载地址


反对 0举报 0 收藏 0 打赏 0评论 0
下载排行
网站首页  |  关于我们  |  联系方式  |  使用协议  |  版权隐私  |  网站地图  |  排名推广  |  广告服务  |  积分换礼  |  网站留言  |  RSS订阅  |  违规举报  |  京ICP备2021025988号-4