| 申请日期 | 2025-06-25 | 申请号 | EP04253018 |
| 公开（公告）号 | EP1479658B1 | 公开（公告）日 | 2007-05-09 |
| 公开国别 | EP | 申请人省市代码 | 全国 |
| 申请人 | UNITED TECHNOLOGIES CORPORATION | ||
| 简介 | A bond layer (14) for a silicon based substrate (12) comprises a refractory oxide forming metal having a thickness of between about 0.1 to 10 micron. The refractory oxide forming metal comprise chromium, tantalum, niobium, silicon, platinum, hafnium, yttrium, aluminum, zirconium, titanium, rare earth metals, alkaline earth metals and mixtures thereof. | ||
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