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Sputtering Target and Its Manufacturing Method 发明授权

2023-06-20 3010 251K 0

专利信息

申请日期 2025-07-07 申请号 KR1020000055414
公开(公告)号 KR100714345B1 公开(公告)日 2007-04-26
公开国别 KR 申请人省市代码 全国
申请人 SONY CORPORATION
简介 An ingot is made from a used target of 30 weight % or more, and new metals of the same components, and recycled alloy powder is made by a gas atomizing process. Magnetic permeability is controlled not to exceed 2 by adjusting the content of rare earth metals in rare earth alloy powder to be at least 35 weight %. By blending the recycled alloy powder with other powder to produce alloy powder containing at least 50 weight % of rare earth alloy powder having a magnetic permeability not higher than 2 and containing at least 65 weight % of rare earth alloy powder. By sintering the alloy powder under pressure and thereafter cutting top, bottom and side surfaces of the sintered material, a target having a magnetic permeability not higher than 2 and having a thickness not less than 8 mm is fabricated.


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