| 简介 |
PROBLEM TO BE SOLVED : To prevent the reduction of spontaneous polarization value by controlling the stress in a film when forming a ferroelectric thin film on an Si single crystal substrate. SOLUTION : The ferroelectric thin film is an epitaxial ferroelectric thin film formed on the Si single crystal substrate, consisting of a ferroelectric material, and when it is assumed to be that a crystal face parallel to the crystal face on the surface of the Si single crystal substrate among the crystal faces of this ferroelectric thin film is ZFface, the distance between the ZFfaces is zF, and the distance between the ZFfaces in a bulk state of a ferroelectric thin film-constituting material is zFO, 0.980≤zF/zFO≤1.010 is satisfied; further, the ferroelectric material is a compound expressed by chemical formula ABO3, in which A is at least one kind selected from the group consisting of Ca, Ba, Sr, K, Na, Li, La and Cd; B is at least one kind selected from the group consisting of Ti, Zr, Ta and Nb, or a rare earth element-containing lead titanate, having a perovskite crystal structure, and the thickness of the ferroelectric thin film is 2-100 nm. COPYRIGHT : (C)2007, JPO&INPIT |
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