| 简介 |
PROBLEM TO BE SOLVED : To provide a method for forming a rare earth element-doped oxide precursor, by which a large size substrate can be formed at a low production cost. SOLUTION : A first solution having a first boiling point is formed by adding silicon particles in a first organic solvent. The first solution is filtered to remove large particles. The filtered first solution is mixed with a second organic solvent having a second boiling point higher than the first boiling point. A second solution having nanocrystal silicon is formed by fractional distillation. Silicon particles are formed by immersing a silicon wafer into a third solution containing hydrofluoric acid (HF) and alcohols and then applying a voltage to the silicon wafer to form a porous silicon layer on the silicon wafer. The silicon particles are mixed in the first organic solvent by immersing the silicon wafer into the first organic solvent and removing the porous silicon layer from the silicon wafer by utilizing an ultrasonic wave. COPYRIGHT : (C)2007, JPO&INPIT |
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