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Energy coupled superlattice structures for silicon based lasers and modulators 发明申请

2023-08-18 1060 548K 0

专利信息

申请日期 2025-07-30 申请号 US11490961
公开(公告)号 US20070069332A1 公开(公告)日 2007-03-29
公开国别 US 申请人省市代码 全国
申请人 NEGRO LUCA D; YI JAE H; KIMERLING LIONEL C
简介 A waveguide structure includes a SOI substrate. A core structure is formed on the SOI substrate comprising a plurality of multilayers having alternating or aperiodically distributed thin layers of either Si-rich oxide (SRO), Si-rich nitride (SRN) or Si-rich oxynitride (SRON). The multilayers are doped with a rare earth material so as to extend the emission range of the waveguide structure to the near infrared region. A low index cladding includes conductive oxides to act as electrodes.


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