| 简介 |
PROBLEM TO BE SOLVED : To provide a method for manufacturing a semiconductor device capable of effectively removing a carbon halide film and a silicon halide film which are deposited on a film to be etched. SOLUTION : The method includes a process for removing the carbon halide film and the silicon halide film on the carbon halide film deposited on an etching surface, when dry etching is performed with etching gas containing halogen concerning a semiconductor substrate where at least the layer of a silicon film and a silicon oxide film or the layer of silicon nitride film is formed; a process for removing the carbon halide and the silicon halide by performing wet etching with the use of a rare hydrofluoric acid solution of water after performing the dry etching; and a process for coating a whole surface including the etching surface with an organic material film containing OH or H, and then, conducting ashing with oxygen plasma. COPYRIGHT : (C)2007, JPO&INPIT |
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