申请日期 | 2025-07-06 | 申请号 | US11221624 |
公开(公告)号 | US20070053113A1 | 公开(公告)日 | 2007-03-08 |
公开国别 | US | 申请人省市代码 | 全国 |
申请人 | PAPWORTH PARKIN STUART S | ||
简介 | Magnetic tunnel junctions are disclosed that include ferromagnetic (or ferrimagnetic) materials and a bilayer tunnel barrier structure that includes a layer of a rare earth oxide. The bilayer also includes a layer of crystalline material, such as MgO or Mg—ZnO. If MgO is used, then it is preferably (100) oriented. The magnetic tunnel junctions so formed enjoy high tunneling magnetoresistance, e.g., much greater than 100% at room temperature. |
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