| 申请日期 | 2025-06-28 | 申请号 | US10198705 |
| 公开（公告）号 | US7187045B2 | 公开（公告）日 | 2007-03-06 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Walter David Braddock | ||
| 简介 | A self-aligned enhancement mode metal-oxide-compound semiconductor field effect transistor includes a gate insulating structure comprised of a first conducting oxide layer comprised of indium oxide compounds positioned immediately on top of the compound semiconductor structure, and a second insulating layer comprised of either gallium oxygen and rare earth elements or gallium sulphur and rare earth elements positioned immediately on top of said first layer. | ||
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