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NITRIDE-BASED WHITE LIGHT EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF 发明申请

2023-11-09 1950 465K 0

专利信息

申请日期 2025-07-18 申请号 JP2006221070
公开(公告)号 JP2007053372A 公开(公告)日 2007-03-01
公开国别 JP 申请人省市代码 全国
申请人 Samsung Electronics Co Ltd
简介 PROBLEM TO BE SOLVED : To provide the ohmic contact layer of a white light emitting element having superior optical and electric characteristics. SOLUTION : The light-emitting element comprises an n-type cladding layer; a p-type cladding layer; an active layer positioned between the n- and p-type cladding layers; and an ohmic contact layer that is in contact with the p- or n-type cladding layer, has a one-dimensional nano structure, and includes a first film that contains a transparent conductive zinc oxide (ZnO) containing at least one rare earth metal. The one-dimensional nano structure is one of a nano pole, a nano rod, and a nano wire. COPYRIGHT : (C)2007, JPO&INPIT


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