| 简介 |
PROBLEM TO BE SOLVED : To provide a memory element that ensures correct recording and enables information to be recorded and read easily and stably, even when a short pulse voltage is applied.
SOLUTION : A recording thin film 3 is formed between a first electrode 1 and a second electrode 4, and a memory element 10 contains any one from among elements Cu, Ag and Zn with its size as 70 nm or less, at a layer 2 containing at least oxygen and rare earth in the recording thin film 3 that is within or adjacent to the recording thin film 3.
COPYRIGHT : (C)2007, JPO&INPIT |
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