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Silicon nitride sintered body and its manufacturing method 发明授权

2023-11-10 2440 198K 0

专利信息

申请日期 2026-04-26 申请号 JP07354340
公开(公告)号 JP3876453B2 公开(公告)日 2007-01-31
公开国别 JP 申请人省市代码 全国
申请人 SUMITOMO ELECTRIC IND LTD
简介 PURPOSE : To obtain a dense high strength silicon nitride sintered compact as well as to shorten nitriding time and to enhance productivity by subjecting Si powder having a specified concn. of unpaired electrons to reactive sintering in a nitrogen atmosphere. CONSTITUTION : A compd. of at least one kind of element among rare earth element, Al, Mg, and Ca is added as a sintering aid by 0.1-15mol% (expressed in terms of the element) to Si powder having 10 -10 /cm concn. of unpaired electrons. An element whose valence is +1 to +3 other than Al, Mg and Ca or a compd. of the element is further added as a nitrogen hole forming agent by 0.5-15mol% (expressed in terms of the element). The covalent bond radius RM of the element whose valence is +1 to +3 and the covalent bond radius RSi of Si satisfy the relation of (RM-RSi)/RSi -10 /cm concn. of unpaired electrons, >=99% relative density and >=800MPa three-point bending strength.


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