| 简介 |
PURPOSE : An apparatus for improving plasma activity in a PVD reactor is provided to enable a sputter etching process at a bias value of around -200 volts by increasing a plasma density in a manner that enables sputter etching in a pressure scope of 0.1~0.2 pascal much lower than that of a magnetron deposition system whose plasma density is not improved.
CONSTITUTION : A thermal ion emitting unit is heated by DC current, AC current or mixed current thereof wherein desirably one long filament(4) or several short filaments are interconnected in series, in parallel or in a mixed type of serial and parallel in the thermal ion emitting unit. A high temperature filament ranges from the upper part to the bottom part of a reactor. The filament can be a filament coated with an effectively electron discharging material like tungsten, thorium-containing tungsten, a rare-earth oxide or a carbon nano-tube.
© KIPO 2007 |
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