| 申请日期 | 2025-07-14 | 申请号 | JP2001322926 |
| 公开（公告）号 | JP3872327B2 | 公开（公告）日 | 2007-01-24 |
| 公开国别 | JP | 申请人省市代码 | 全国 |
| 申请人 | NGK INSULATORS LTD | ||
| 简介 | In a semiconductor light-emitting element, an underlayer is made of AlN layer, and a first cladding layer is made of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of i-AlGaInN isolated in the base layer. Then, at least one rare earth metal element is incorporated into the base layer and/or the island-shaped single crystal portions. | ||
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