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TFT and OLED comprising the same TFT and method of crystallizing semiconductor applied to the same T 发明申请

2023-03-03 2370 370K 0

专利信息

申请日期 2025-07-10 申请号 KR1020050065712
公开(公告)号 KR1020070010805A 公开(公告)日 2007-01-24
公开国别 KR 申请人省市代码 全国
申请人 SAMSUNG SDI CO LTD
简介 PURPOSE : A thin film transistor is provided to improve heat efficiency with respect to crystallization by preventing the incident heat by a laser beam from being transferred from an amorphous silicon layer to an underlying substrate while using a heat blocking layer. CONSTITUTION : A heat blocking layer(30) is formed on a substrate(10), made of YSZ(yttria-stabilized zirconia), a YSZ compound or a rare-earth zirconates. A polycrystalline semiconductor active layer is formed on the heat blocking layer, including a source, a drain and a channel region. A buffer layer(20) is formed between the substrate and the heat blocking layer. © KIPO 2007


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