| 简介 |
PROBLEM TO BE SOLVED : To provide a method for controlling distortion of a single crystal epitaxial oxide.
SOLUTION : The method for controlling distortion of the single crystal epitaxial oxide includes : a step for preparing a silicon substrate; a step for forming a silicon alloy layer selected from a group of silicon alloy layers consisting of Si1-xGex and Si1-yCy; a step for adjusting lattice constant of the silicon alloy layer by selecting content of an alloy material to select a form of distortion of the silicon alloy layer and adjust it; a step for depositing a single crystal epitaxial oxide film selected from a group of oxide films consisting of a perovskite type manganese oxide, a single crystal rare earth oxide, a perovskite type oxide including no manganese, a bivalent rare earth oxide, and a trivalent rare earth oxide on the silicon alloy layer in an atomic layer deposition method; and a step for bringing a desired device to completion.
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