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METHOD OF MANUFACTURING ELECTRONIC DEVICE MATERIAL 发明申请

2023-07-29 2760 161K 0

专利信息

申请日期 2025-07-17 申请号 JP2006231186
公开(公告)号 JP2007013200A 公开(公告)日 2007-01-18
公开国别 JP 申请人省市代码 全国
申请人 TOKYO ELECTRON LTD
简介 PROBLEM TO BE SOLVED : To provide a method of manufacturing an electronic device structure (such as a high performance MOS semiconductor device) having excellent electric characteristics using an SiO2 film and an SiON film having extremely thin (such as 2.5 nm or less) film thickness as an insulating film, and using polysilicon, amorphous silicon, and SiGe as an electrode. SOLUTION : By irradiation of microwave on a wafer W via a planar antenna member SPA under an existence of a processing gas containing oxygen and rare gas, plasma is formed containing the oxygen and rare gas (or plasma containing nitrogen and rare gas, or plasma containing nitrogen, rare gas, and hydrogen). By using this plasma, an oxide film (or oxynitride film) is formed on the surface of the wafer, thereby forming an electrode such as polysilicon as needed, and an electronic device structure is thus formed. COPYRIGHT : (C)2007, JPO&INPIT


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