| 申请日期 | 2025-06-26 | 申请号 | JP2002133056 |
| 公开（公告）号 | JP3866149B2 | 公开（公告）日 | 2007-01-10 |
| 公开国别 | JP | 申请人省市代码 | 全国 |
| 申请人 | FUJITSU LTD | ||
| 简介 | A first film of rare-earth metal is formed on a semiconductor region of compound semiconductor exposed on a substrate. A second film essentially comprising silicon is formed on the surface of the first film. The first and second films are heated to silicidate at least a portion of the first film in contact with the second film. It is possible to lower the contact resistance of an ohmic electrode formed on semiconductor having a wide band gap. | ||
|
您还没有登录，请登录后查看下载地址
|
客服热线：
手机版
二维码
