| 简介 |
A structure having a dielectric layer that includes a dielectric material comprising a first metal nitride, and an electrode layer disposed over the dielectric layer, the electrode layer comprising a second metal nitride, with the first metal nitride and the second metal nitride having at least one metal in common. Alternatively, structure has a dielectric layer including a dielectric material comprising a metal oxide, and an electrode layer disposed over the dielectric layer, the electrode layer comprising a metal nitride. The metal oxide and the metal nitride each comprise at least one of a rare earth metal, a group IIIA metal, an alkali metal, an alkaline earth metal, and a transition metal, and the metal oxide and the metal nitride comprise the same metal. An interfacial layer may be disposed under the dielectric layer. |
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