| 简介 |
High efficiency at low cost a wide range of spectrum formed on the multi-semiconductor light-emitting device with high. The present invention according to semiconductor light-emitting device comprises a, the n-type clad layer on a substrate, an active layer and is-type cladding p, said plurality of quantum well layers and quantum barrier active layer having the multiple quantum well structure is mounted in the casing longitudinally, having different wavelengths are being emitted 2 to generate light and at least one rare earth or transition metal in an active layer emitting nuclei are said doped in well layer of different quantization. |
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