| 申请日期 | 2026-03-24 | 申请号 | US10570310 |
| 公开（公告）号 | US20060284282A1 | 公开（公告）日 | 2006-12-21 |
| 公开国别 | US | 申请人省市代码 | 全国 |
| 申请人 | Shaun Joseph Cunningham | ||
| 简介 | A manufacturing method and structure for a MIS Heterojunction Bipolar Transistor (HBT) is provided including a GaAs substrate which has a collector region; a base layer coupled to the collector region; the ultra-thin insulating layer including a rare earth oxide coupled to the base layer; and an emitter structure including metal layers coupled to the ultra-thin insulating layer. | ||
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