| 简介 |
The present invention refers to cathode arc deposition coating film, using method relates to thin film deposition TiAlSiN, Ti target and, AlSi or a arc target, TiAlSi composite [...] arc a method for forming platinum trace of impurities by is induced on the surface of the processed material to form a plasma so as to form a coating layer TiAlSiN coating film, by producing a cutting tool of cathode arc deposition coating film, using TiAlSiN thin film deposition method is provided to heat exchanger..
The present invention refers to using cathode arc deposition TiAlSiN cathode arc the coating film, preferably the electroless deposition process AlSi target or TiAlSi Ti target and target side and tower-mounted target; said targets and doping and pattering a photoresist, a earth 10 -5 ∼ 10 -7 Torr said lower end of a gate valve and air chamber; inertia gas to said chamber by implanting doping and pattering a photoresist, said 10 -1 ∼ 10 -3 Torr-set, an agent name and for cleaning the surface of the processing object up to a plasma cleaning and; nitrogen to flow chamber after arc source and the current bias voltage are applied to the form a plasma TiAlSiN forming a layer is compared with a result obtained by in that.
Using the application, the present invention, the coating a potential is applied to the target Ti is 18V, coating current and 45A, AlSi and 19V a potential is applied to the target for coating, coating current is 35A embodiment results comprising a negative electrode arc deposition, coating film of coating film, to obtain at signal. that. |
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