| 简介 |
PROBLEM TO BE SOLVED : To obtain high-efficient and high light emitting intensity by a light-emitting device made of silicon.
SOLUTION : A slot 121 is formed in a silicon small-gauge core 102, and an active layer 122 is arranged inside the slot 121. The slot 121 is extended in the extension direction (the waveguide direction of light) of the silicon small-gauge core 102, and is formed in a rectangular shape in a plan view having a long-side length of L. For example, width G at the widest section in the slot 121 is formed to be 0.05 μm, width W in the silicon small-gauge core 102 is formed to be 0.41 μm, and height H of the silicon small-gauge core 102 is formed to be 0.3 μm. Additionally, the active layer 122 is made of silicon oxide in which the ions of rare-earth elements, such as erbium, are added (dispersed).
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