| 简介 |
PROBLEM TO BE SOLVED : To obtain an epitaxial wafer capable of remarkably reducing crystal defects in an epitaxial film and markedly improving device characteristics thereof when used in an electronic device by epitaxially growing a gallium nitride-based compound on a single crystal substrate having a specific structure. SOLUTION : One of the following (1) to (5) is used as a single crystal substrate. (1) a type belonging to an apatite type hexagonal crystal and having the general structural formula represented by A5 (PO4 )3 F (A is a group 2A element, especially Ca or Sr) or X2 Z8 (SiO4 )6 O2 (X is a group 2A element, especially Ca or Sr; Z is a group 3A rare earth element, especially La or Y), (2) a type in which SiO4 is substituted with PO4 in the X2 Z8 (SiO4 )6 O2 in (1), (3) an oxide single crystal having the general structural formula represented by Li2 B4 07 , (4) an oxide single crystal having the general structural formula represented by La3 Nb1-x Gax O14 [0<(x)<1] and (5) an oxide single crystal having the general structural formula represented by LiHo(WO4 )2 . |
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