| 简介 |
PROBLEM TO BE SOLVED : To provide a method for manufacturing a memory element having proper characteristics by suppressing variation in characteristics such as the threshold voltage in storing/reading/writing information.SOLUTION : A thin film 2 for memory is sandwiched between a first electrode 1 and a second electrode 4 and the thin film 2 contains a rare earth oxide layer. When a memory element 10 containing any one element selected from Ag, Cu and Zn is manufactured in the thin film 2 for memory or in a layer 3 touching the thin film 2, the thin film 2 for memory is formed by reactive sputtering method.COPYRIGHT : (C)2007, JPO&INPIT |
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