| 简介 |
PROBLEM TO BE SOLVED : To provide a plating film forming method in which the re-crystallization of copper or the relaxation of distortion due to heat treatment is improved and the peeling among copper, a base barrier film and an insulating material such as a Low-k material due to the distortion does not occur after an electroplated copper film is formed on a substrate on which a recessed part such as a wiring trench is formed.
SOLUTION : In the plated film forming method carried by forming the plated film on the substrate on which the recessed part such as the wiring trench is formed in a plating step, a plating inhibiter sticking step for covering the uppermost surface of the substrate with the plating inhibiter is carried out prior to the plating step. The inside surface of the recessed part such as the wiring trench or a via hole formed on the substrate is selectively plated by covering the the uppermost surface of the substrate with the plating inhibiter in this way to attain flatness through the whole substrate when the plating is finished at a proper point of time.
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