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Light emitting diode 发明授权

2023-07-17 3650 231K 0

专利信息

申请日期 2025-08-03 申请号 KR1020050055035
公开(公告)号 KR100646634B1 公开(公告)日 2006-11-09
公开国别 KR 申请人省市代码 全国
申请人 SEOUL OPTO DEVICE CO LTD
简介 PURPOSE : A light emitting diode is provided to embody various desired colors by converting the wavelength of primary light emitted from a light emitting chip. CONSTITUTION : A substrate(10), a light emitting layer(50) and a wavelength conversion layer(60) are sequentially stacked. The light emitting layer includes an N-type semiconductor layer(20) and a P-type semiconductor layer(40). The wavelength conversion layer is a III-group nitride semiconductor doped with rare earth elements. At least one of the light emitting layers emits light with a wavelength shorter than that of light emitted from the light emitting layer. © KIPO 2007


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