| 简介 |
PURPOSE : A semiconductor light emitting device is provided to easily and efficiently obtain broad spectrum light at low cost by doping rare earth metal or transition metal having mutually different wavelengths into a quantum well layer in a multiple quantum well structure in which high-density charge carriers are gathered.
CONSTITUTION : An n-type clad layer(105), an active layer(107) and a p-type clad layer(109) are sequentially formed on a substrate. The active layer is made of a multiple quantum well structure having a plurality of quantum well layers and a quantum barrier layer. Rare earth metal or transition metal corresponding to a light emitting nucleus capable of generating light with different wavelengths is doped into the quantum well layers. The rare earth metal or the transition metal doped into one of the quantum well layers is at least one selected from a group composed of Tm, Er, Cr, Eu, Pr, Ce, Nd, Sm, Gd, Tb, Dy and Ho.
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