| 简介 |
PROBLEM TO BE SOLVED : To provide a manufacturing method of silicon on insulator or SOI wafer which can prevent heat distortion caused by a difference of coefficient of thermal expansion between a transparent insulation substrate and an SOI layer, lifting and laminating failure caused by crack or the like and a level difference of surface of insulating film, and to provide the SOI wafer.
SOLUTION : The method comprises the processes of forming an ion implanting layer within a wafer by implanting at least either of hydrogen ion and rare gas ion from a surface of a single crystal silicon wafer; forming a shadowing film on the transparent insulation substrate, and performing a patterning treatment; forming an application film by applying an application composite containing a compound having a silazane structure on it; forming an insulating film by processing this in a baking treatment; planarizing its surface by a polishing treatment; treating an ion implanting surface of the single crystal silicon wafer and/or a polished surface of the transparent insulation substrate by plasma and/or ozone; bonding the ion implanting surface and the polished surface, by sticking at room temperature; and forming the SOI layer, by mechanically lifting the single crystal silicon wafer by applying a shock to the ion implanting layer.
COPYRIGHT : (C)2007, JPO&INPIT |
客服热线：
手机版
二维码
