| 简介 |
PROBLEM TO BE SOLVED : To manufacture a semiconductor device of high performance and high reliability at a relatively low temperature by making a semiconductor film irradiated with a plasma formed of mixture gas of rare gas and oxidizing gas. SOLUTION : First, a semiconductor film of polycrystalline silicon, etc., is formed on an insulating substance of a layer insulation film, etc., of a glass substrate as a first process. Then, as a second process, an oxide film is formed on a semiconductor film at about 450 deg.C or lower. The oxide film is formed by forming a semiconductor film in the first process irradiated with a plasma consisting of mixture gas of rare gas, such as helium and oxidizing gas such as oxygen. A semiconductor film surface layer part is oxidized by such plasma irradiation, and a 3 to 10 nm thick oxide film, whose main constituent substance is silicon oxide, is formed in a surface thereof. In this way, high quality for an oxide film whose thickness is at most about 10 nm can be realized, and a thin film semiconductor device can be driven at a ultra-low voltage. |
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