| 简介 |
A method for manufacturing an SOI wafer by an ion implanting separation method. In the method, at least an oxide film is formed on at least one surface of a base wafer and a bond wafer to be an SOI layer, at least either hydrogen ions or rare gas ions are implanted from the surface of the bond wafer to form an ion implanted layer, and the bond wafer is closely bonded with the base wafer through the oxide film. Then, heat treatment is performed, the work is separated at the ion implanted layer to form an SOI layer, heat treatment is performed under oxidizing atmosphere, an oxide film is formed on the surface of the SOI layer, the oxide film is removed by etching, and the surface of the SOI layer is cleaned by ozone water and polished. Thus, a damaged layer remaining on the SOI layer surface after the separation and surface roughness are eliminated while maintaining film thickness uniformity of the SOI layer, and a high quality SOI wafer is manufactured. |
客服热线：
手机版
二维码
