| 申请日期 | 2025-06-29 | 申请号 | EP01128743 |
| 公开（公告）号 | EP1211737A3 | 公开（公告）日 | 2006-10-18 |
| 公开国别 | EP | 申请人省市代码 | 全国 |
| 申请人 | NGK INSULATORS LTD | ||
| 简介 | In a semiconductor light-emitting element, an underlayer is made of AlN layer, and a first cladding layer is made of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of i-AlGaInN isolated in the base layer. Then, at least one rare earth metal element is incorporated into the base layer and/or the island-shaped single crystal portions. | ||
|
您还没有登录，请登录后查看下载地址
|
客服热线：
手机版
二维码
