| 简介 |
Disclosed is a method for forming a gate insulating film comprising an oxidation step wherein a silicon oxide film is formed by having an oxygen-containing plasma act on silicon in the surface of an object to be processed in a process chamber of a plasma processing apparatus. The processing temperature in the oxidation step is more than 600˚C and not more than 1000˚C, and the oxygen-containing plasma is formed by introducing an oxygen-containing process gas containing at least a rare gas and an oxygen gas into the process chamber while introducing a high-frequency wave or microwave into the process chamber through an antenna. |
客服热线：
手机版
二维码
