申请日期 | 2025-09-10 | 申请号 | WOJP06306744 |
公开(公告)号 | WO2006106875A1 | 公开(公告)日 | 2006-10-12 |
公开国别 | WO | 申请人省市代码 | 全国 |
申请人 | FUKUDA CRYSTAL LABORATORY; FUKUDA Tsuguo; YOSHIKAWA Akira; SATO Hiroki | ||
简介 | A material for high-temperature region piezoelectric device that can be used at a high temperature zone exceeding 400˚C, having a resistivity whose temperature dependence is slight. The material is characterized by having a composition selected from the group consisting of RE3Ga5-xAlxSiO14 (wherein RE represents a rare earth, and 0 |
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