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NONVOLATILE MEMORY ELEMENT 发明申请

2023-03-12 4380 40K 0

专利信息

申请日期 2025-09-11 申请号 JP2005084913
公开(公告)号 JP2006269688A 公开(公告)日 2006-10-05
公开国别 JP 申请人省市代码 全国
申请人 NAT INST OF ADV IND TECHNOL
简介 PROBLEM TO BE SOLVED : To provide a material composition constituting using three elements a nonvolatile memory element made from perovskite transition metal oxide having a CER effect. SOLUTION : An rare earth copper oxide made from oxygen, copper, and one kind of rare earth such as La2CuO4 is employed as the material constituting hetero junction with such conductor having a low work function or electrical negativity such as Ti, as an electrode. COPYRIGHT : (C)2007, JPO&INPIT


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