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NONVOLATILE MEMORY ELEMENT 发明申请

2023-02-09 3150 154K 0

专利信息

申请日期 2026-03-10 申请号 WOJP06305775
公开(公告)号 WO2006101151A1 公开(公告)日 2006-09-28
公开国别 WO 申请人省市代码 全国
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY; SAWA Akihito; FUJII Takeshi; KAWASAKI Masashi; TOKURA Yoshinori
简介 Provided is a material composition which allows the preparation of a nonvolatile memory element comprising a perovskite-type transition metal oxide having the CER effect by the use of three chemical elements. A nonvolatile memory element, which comprises an electric conductor having a shallow work function or a small electronegativity, such as Ti, as an electrode, and a rare earth-copper oxide comprising a rare earth element, copper and oxygen, such as La2CuO4, as a material constituting a heterojunction with the electric conductor.


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