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Sputtering target and its manufacturing method 发明申请

2023-06-27 2780 455K 0

专利信息

申请日期 2025-06-26 申请号 JP2005512480
公开(公告)号 JPWO2005012591A1 公开(公告)日 2006-09-21
公开国别 JP 申请人省市代码 全国
申请人 JAPAN ENERGY BUNSEKI CENTER : KK
简介 A sintered sputtering target having a structure where the average crystallize size is 1 nm to 50nm and preferably comprises an alloy having a three-component system or greater containing, as its primary component, at least one element selected from among Zr, Pd, Cu, Co, Fe, Ti, Mg, Sr, Y, Nb, Mo, Tc, Ru, Rh, Ag, Cd, In, Sn, Sb, Te and a rare earth metal. This target is manufactured by sintering atomized powder. Thereby provided is a high density target having an extremely fine and uniform structure manufactured with the sintering method, in place of a conventional bulk metal glass produced by the quenching of a molten metal, which has a coarse crystal structure and requires a high cost for its production.


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